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Other
postgraduate degree
Posted 33d ago
Apply by Sep 30
~40 hrs/week
Responsibilities
Lead the research, design, and optimization of next-generation GaN-based power devices and enhancement-mode GaN HEMTs. Collaborate with foundry partners and cross-functional teams to improve device performance, manufacturability, and robustness.
Requirements
Requires a Ph.D. in Electrical Engineering, Physics, or Materials Science, or an M.S. with 4+ years of industry experience. Must have proficiency in TCAD tools, semiconductor physics, and programming for engineering analysis.
Full job description
Job DetailsJob Location: PunePosition Summary
We are seeking a highly motivated Senior Device Engineer to join our GaN Technology Development team and contribute to the research, design, and development of next-generation advanced GaN-based power devices. In this role, you will help develop innovative device architectures and advance existing technology platforms to enable robust, high-performance GaN devices for power conversion applications.
You will work closely with cross-functional engineering teams and foundry partners, applying semiconductor device physics, TCAD simulation, electrical characterization, and data-driven analysis to help develop scalable, manufacturable GaN technologies.
Key Responsibilities
Support the design, development, and optimization of enhancement-mode GaN HEMTs for high-power applications. Research and evaluate novel device architectures to improve electrical performance, manufacturability, and long-term robustness. Assist in planning and executing Design of Experiments (DOE) to evaluate new device structures, layouts, and technology options. Perform TCAD simulations to characterize and predict device behavior. Support on-wafer electrical characterization to advance technology development. Analyze wafer- and package-level electrical data to identify performance limitations and support device optimization. Collaborate with foundry partners to evaluate device and process tradeoffs affecting yield, reliability, and manufacturability. Document findings, prepare engineering reports, and present results to cross-functional teams.
QualificationsRequired Qualifications
Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field; or M.S. in one of these fields with 4+ years of relevant industry experience. Strong foundation in semiconductor device physics, power devices, and wide-bandgap semiconductor technologies. Hands-on experience with TCAD tools (e.g., Synopsys Sentaurus, Silvaco Atlas, or equivalent). Experience with electrical characterization and data interpretation for semiconductor devices. Programming experience in Python, MATLAB, or similar languages for engineering analysis and automation. Strong analytical, problem-solving, and communication skills, both written and verbal.
Preferred Qualifications
Research experience with high-power GaN devices (academic or industry). Working knowledge of semiconductor reliability mechanisms and their influence on device design. Exposure to designing or analyzing DOEs for device development. Familiarity with semiconductor failure analysis techniques. Publications, patents, conference presentations, or other technical contributions from graduate research.
Next-generation, clean-energy power semiconductors supporting an efficient and sustainable future.
Industry
Semiconductor Manufacturing
Company size
201-500 employees
Founded
2014
Headquarters
Torrance, CA
LinkedIn followers
30,860
Total funding
$312M
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Offices: 3520 Challenger St., Torrance, CA 90503, US
Gallium NitrideGaNGaN Power ICsFast ChargersEVSolarData CenterReduced CO2 EmissionsParis AccordSilicon Carbide
Next-generation, clean-energy power semiconductors supporting an efficient and sustainable future.
Industry
Semiconductor Manufacturing
Company size
201-500 employees
Founded
2014
Headquarters
Torrance, CA
LinkedIn followers
30,860
Total funding
$312M
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Offices: 3520 Challenger St., Torrance, CA 90503, US
Gallium NitrideGaNGaN Power ICsFast ChargersEVSolarData CenterReduced CO2 EmissionsParis AccordSilicon Carbide