Ph.D. in the Field of GaN Transistor Reliability
- Workplace
- On-site
- Employment
- Full-time
About this role
INNOVATIONS FROM A SINGLE SOURCE
CHANGE STARTS WITH US
At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society.
How can GaN-based transistors for high-frequency applications be made more reliable? In your PhD research, you’ll get to the bottom of this question: You’ll investigate degradation mechanisms and develop approaches to specifically improve the devices. In doing so, you’ll work closely with colleagues from the fields of technology, epitaxy, and measurement technology.
Be part of change
- A master’s degree in electrical engineering, microsystems engineering, physics, or a related field, as well as, ideally, knowledge of solid-state and semiconductor physics.
- A passion for experimental research, an interest in analysis and simulation, and some experience in programming and data analysis.
- An independent, structured, and scientific approach to work; the ability to quickly familiarize yourself with new research questions; and strong teamwork and communication skills.
- Very good German and good English skills for working in an international environment.
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Read the Ph.D. in the Field of GaN Transistor Reliability listing at Fraunhofer IGD (https://www.getclera.com/jobs/fraunhofer-igd/ph-d-in-the-field-of-gan-transistor-reliability-6x6ucuw5vrie) and tell me whether it fits my profile. Save it for me if it does.
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