Sr. GaN Applications Engineer
About this role
Job DetailsJob Location: Pune
Perform direct high-voltage/low voltage GaN device testing and characterization, including double pulse testing (DPT), short-circuit testing, SOA, ruggedness, and device performance evaluation of GaN devices.
Define and optimize gate-drive solutions, including gate resistance selection, protection features, and isolation strategies.
Design, build, and validate Evaluation (EVAL) boards for customer enablement and internal demonstration.
Develop high-quality Application Notes, design guides, and technical documentation for customers and internal teams.
Better to have certain understanding of AI data center power architectures, including front-end AC/DC and back-end DC/DC stages and high-voltage DC distribution.
Better to have some understanding of advanced power topologies such as totem-pole and interleaved PFC, LLC resonant converters, Dual Active Bridge (DAB), etc.
Perform device- and system-level simulations using LTspice/SIMetrix/PLECS.
Conduct hands-on lab work using oscilloscopes, high-voltage probes, power analyzers, electronic loads, and other high-voltage test equipment.
Provide technical enablement to FAEs and sales teams.
Collaborate with R&D, product marketing, quality, and operations teams to support customer programs and product development.
Qualifications
4~7 years of hands-on experience in power electronics design and applications.
Direct experience in high voltage/low voltage semiconductor testing and characterization is preferred.
Experience with power electronics schematic and PCB design.
Good knowledge of GaN devices, gate drivers, and isolation technologies.
Experience with AI data center power systems is a plus.
Proficiency with LTspice, SIMetrix and PLECS, and PCB design tools such as Altium.
Hands-on experience in high-voltage lab environments.
Strong written and verbal communication skills with good attention to detail.
Company at a glance
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
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