Sr. Director, SiC Power Module Development
About this role
Job DetailsJob Location: Manila, AlabangLeadership Roles and Responsibilities
Lead the development and execution of the SiC power module technology roadmap supporting high-voltage and ultra-high-voltage product platforms.
Build, lead, and develop a global organization of package, module, materials, process, reliability, and manufacturing engineers.
Drive the development of advanced power module packaging technologies from concept and prototype through qualification, safe launch, manufacturing ramp, and production release.
Establish module architectures, design rules, material strategies, and assembly processes that enable industry-leading performance, reliability, manufacturability, and cost.
Own technical execution of power module development programs across all development phases and applicable product development gates.
Lead development activities at OSAT partners, ensuring process capability, quality, capacity readiness, documentation, and operational execution.
Drive design-for-manufacturing, design-for-reliability, design-for-test, and technical risk mitigation throughout the product development cycle.
Establish robust package and module development methods, including requirements management, DFMEA, design reviews, qualification plans, technology readiness assessments, and manufacturing readiness reviews.
Partner with Product Engineering, Device Engineering, Test Engineering, Quality, Supply Chain, Operations, and Business Units to ensure successful product execution.
Define the long-term OSAT strategy, including technology capability development, supplier qualification, capacity planning, and second-source initiatives.
Serve as the senior technical interface with customers, suppliers, and manufacturing partners for SiC power module technologies.
Drive continuous improvement in quality, yield, cycle time, cost, and operational performance across module manufacturing operations.
Technical Roles and Responsibilities
Define the technology roadmap for next-generation SiC power modules supporting 1.2kV through ultra-high-voltage platforms 2.3kV and higher.
Lead development of advanced module architectures, including substrate technologies, high-voltage isolation systems, terminal designs, interconnect structures, current-sharing approaches, and thermal-management solutions.
Establish module electrical, thermal, mechanical, reliability, manufacturability, and cost requirements and lead engineering tradeoff decisions throughout development.
Drive selection, characterization, and qualification of AMB and DBC substrates; die-attach and sintering materials; wire, ribbon, and clip interconnects; molding and encapsulation materials; thermal-interface materials; housings; and high-voltage insulation systems.
Lead electrical, electro-thermal, thermal, and mechanical simulation activities, including parasitic extraction, finite-element analysis, stress and warpage modeling, electric-field analysis, power-cycling life prediction, and partial-discharge assessment.
Define assembly process technologies, specifications, controls, and process windows for die attach and sintering, substrate attach, wire and ribbon bonding, clip attach, encapsulation, transfer molding, housing assembly, cleaning, curing, marking, and traceability.
Drive structured design of experiments, process characterization, SPC, Cpk improvement, defect reduction, and manufacturing yield improvement at OSATs.
Lead root-cause analysis and corrective actions for complex module failures, including delamination, die-attach voiding, sinter fatigue, interconnect degradation, thermal runaway, insulation breakdown, partial-discharge failures, moisture ingress, and housing or substrate cracking.
Work with test engineering to define wafer-sort, known-good-die, wafer-level burn-in, reliability screening, module final-test, high-voltage isolation, and partial-discharge test strategies
Lead technical evaluations and qualifications of OSATs, substrate suppliers, assembly-equipment vendors, material suppliers, and external reliability laboratories.
Own technical release criteria, control plans, safe-launch requirements, manufacturing readiness, and post-release monitoring for new module platforms.
Serve as the company technical authority for SiC power module architecture, packaging materials, assembly processes, qualification strategy, reliability, and manufacturing readiness.
QualificationsRequired Qualifications
M.S. or Ph.D. in Electrical Engineering, Mechanical Engineering, Materials Science, Physics, or a related technical discipline.
15+ years of semiconductor packaging or power module development experience, including significant technical leadership responsibility.
Proven experience developing and releasing power semiconductor modules from concept and prototype through qualification and production.
Deep knowledge of power module architectures, packaging materials, assembly processes, thermal management, electrical parasitics, high-voltage isolation, and reliability engineering.
Demonstrated experience leading module development and industrialization with OSATs or outsourced manufacturing partners.
Strong understanding of JEDEC, AEC-Q, and relevant industrial or automotive qualification methodologies.
Proven record of building and leading global, multidisciplinary engineering teams.
Experience managing complex development programs involving multiple internal functions, suppliers, and manufacturing partners.
Excellent leadership, communication, executive presentation, and data-driven decision-making skills.
Ability to travel internationally as required.
Preferred Technical Expertise
SiC MOSFET power modules across 1.2kV, 1.7kV, 2.3kV, 3.3kV, and higher voltage classes.
Ultra-high-voltage insulation design, electric-field management, creepage and clearance, and partial-discharge mitigation.
AMB/DBC substrate technology and high-reliability substrate attachment.
Pressureless or pressure-assisted silver sintering and advanced die-attach technologies.
High-current wire, ribbon, and clip interconnect technologies.
Power-module thermal management, electro-thermal modeling, power cycling, and lifetime prediction.
Automotive, industrial, renewable-energy, energy-storage, traction, or grid-infrastructure applications.
Known-good-die, wafer-level burn-in, and module-level high-voltage test solutions.
OSAT power module industrialization, second-source qualification, safe launch, and high-volume manufacturing ramp.
Experience developing technology roadmaps and building engineering organizations during rapid growth.
Leadership Expectations
Build a high-performance engineering culture focused on technical excellence, accountability, execution, innovation, and continuous improvement.
Develop technical leadership capability and succession plans across the global organization.
Drive effective collaboration across engineering, operations, quality, supply chain, and business teams.
Establish clear goals, metrics, ownership, and development plans to enable organizational success.
Foster strong, transparent partnerships with OSATs, material suppliers, equipment vendors, and technology partners.
Champion disciplined decision-making, risk management, and on-time closure of technical issues.
Company at a glance
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited or affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
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