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Job Description:

Reporting to Device manager in Rousset and collaborate with team members in France and the United States (San Jose - California).

The internship involves the characterization and optimization of ESF3 cell and periphery devices in advanced test conditions: High Temperature (150-175C) and Cold temperature (-40C) for Automotive SLC (Single Level Cell)

1st objective is to get familiar with Super Flash technologies (mainly ESF3, 3rd generation Super Flash cell), device structures and operating conditions and mechanisms (Fowler-Nordheim tunnelling for erase and hot electron source-side injection for programming). Review lay-out using Calibre/Cadence tools.

2nd objective is to get familiar with electrical test equipment (including test coding and prober management)

3rd objective is to define several measurement plans (within Cell or High Voltage device Performance / Reliability) and perform electrical characterizations.

4th objective is to analyse data and do a status, propose improvements, and present results and conclusions in technical team meetings. If possible, use TCAD simulator to consolidate the conclusions.

What’s attractive about this opportunity?

This position will give you a hands-on experience on NVM cell and HV testing. You will tackle real technology challenges and be encouraged to use your knowledge in an environment where new ideas are welcome.

You will have the opportunity to work in an international team covering multiple aspects of the semiconductor industry (semiconductor physics, transistor and cell characterization, process and test).

Internship duration 6 months

Requirements/Qualifications:

Master 2 research student or 3rd year student of an “Ecole d’Ingénieur”

Competencies
• Microelectronic basis skills: Device Physics and Electronics
• Interpersonal skills: self-motivated, involved in the work, good communication.
• Verbal and written communication skills in English and French.

Travel Time:

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